Method of forming a nonsilicon semiconductor on insulator structure
AssigneesUniversity of North Carolina, Microelectronics Center of North Carolina
InventorsArnold Reisman, Wei-Kan Chu
Life of this patent
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Abstract
A method of forming a nonsilicon semiconductor layer on an insulating layer by forming a thin heteroepitaxial layer of nonsilicon semiconductor on a first substrate having a lattice structure which matches that of the heteroepitaxial layer. A first insulating layer is formed on the heteroepitaxial layer. A second insulating layer is formed on the surface of a second substrate. The first and second insulating layers are bonded together to form a unified structure, and the first substate is etched away. In a preferred embodiment the heteroepitaxial layer is germanium, gallium arsenide or silicon-germanium alloy while the first substrate is silicon, germanium, gallium arsenide or silicon-germanium alloy.
Claims19
A method of forming a nonsilicon semiconductor layer on an insulating layer comprising the steps of:
- (a) forming a heteroepitaxial nonsilicon semiconductor layer on a first substrate;
- (b) forming a first insulating layer on said heteroepitaxial nonsilicon semiconductor layer;
- (c) forming a second insulating layer on a second substrate;
- (d) bonding together said first and second insulating layers;
- and,
- (e) removing said first substrate.
A method of forming a semiconductor layer on an insulating layer comprising the steps of:
- (a) forming a heteroepitaxial layer selected from the group consisting of germanium, gallium arsenide or silicon-germanium alloy, on a first substrate selected from the group consisting of silicon, germanium, gallium arsenide or silicon-germanium alloy;
- (b) forming a first insulating layer on said heteroepitaxial layer;
- (c) forming a second insulating layer on a second substrate;
- (d) bonding said first and second insulating layers;
- and
- (e) removing said first substrate.
A method of forming a germanium on insulator structure comprising the steps of:
- (a) implanting germanium under a surface of a silicon first substrate;
- (b) heating to recrystallize the germanium on said surface of said silicon first substrate while forming a layer of silicon dioxide on the recrystallized germanium layer;
- (c) forming an insulating layer on a second substrate;
- (d) bonding together said layer of silicon dioxide and said insulating layer;
- and
- (e) removing said first substrate.
Dependencies are inferred from the claim text.