Solution growth of lattice mismatched and solubility mismatched heterostructures
AssigneeUniversity of Delaware
InventorsAllen M. Barnett, John C. Zolper
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Abstract
The effects of excessive lattice mismatch in solution grown heterostructures are reduced by incorporating a lattice graded interface layer between the substrate and the heteroepitaxial layer. The effects of lattice mismatch are also reduced by reducing the contact area with a selective growth mask which controls where growth initiates on the substrate. The effect of mismatched solubility is reduced by double saturation of the solvent and selective supersaturation of the solvent.
Claims14
In a method of making semiconductor structures by solution growth of heterostructure layers wherein a heterostructure capping layer is solution grown on a substrate and is subsequently at last partially removed by dissolution during solution growth of a second, different heterostructure layer, the improvement comprising preparation of the substrate surface by the solution grown heterostructure capping layer to facilitate solution growth of the second heterostructure layer.
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