Y10S 148/076
Implant
Y10S148/076 (Implant) appears on 9 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 9
- Published applications
- 1
- Assignees
- 6
- Inventors
- 18
- Latest grant
- 22 Jun 2004
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Medical implant made of biocompatible low modulus high strength titanium-niobium alloy and method of using the same22 Jun 2004US 6,752,882 B2
- Biocompatible low modulus titanium alloy for medical implant25 Jun 2002US 6,409,852 B1
- Method of fabricating thin film transistor8 Sep 1998US 5,804,471 ASemiconductor Energy Laboratory Co.Ltd.
- Solid state device fabrication method including a surface treatment step with a neutral particle beam with an energy between 10ev and 100ev24 May 1994US 5,314,839 AHitachi, Ltd.
- Method of manufacturing semiconductor device1 Mar 1994US 5,290,709 ANEC Corporation
Most cited
By later US patents
- Biocompatible low modulus titanium alloy for medical implant62US 6,409,852 B12002
- Method for making solid state device utilizing ion implantation techniques58US 5,082,793 A1992
- Method of fabricating thin film transistor55US 5,804,471 ASemiconductor Energy Laboratory Co.Ltd. · 1998
- Solid state device fabrication method including a surface treatment step with a neutral particle beam with an energy between 10ev and 100ev27US 5,314,839 AHitachi, Ltd. · 1994
- Gettering process with multi-step annealing and inert ion implantation26US 4,885,257 AKabushiki Kaisha Toshiba · 1989