Method of fabricating thin film transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Akira Takenouchi, Yasuhiko Takemura
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Abstract
A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one of these vacuum apparatuses is a laser.
Claims13
A method of manufacturing a thin film transistor comprising the steps of:
- forming a semiconductor layer over a substrate;
- introducing ions of an impurity to selected portions of said semiconductor layer;
- and
- performing a rapid thermal annealing on said semiconductor layer after introduction of said ions.
A method of manufacturing a thin film transistor comprising the steps of:
- placing a substrate having a semiconductor layer formed thereover in a vacuum chamber;
- introducing a dopant gas into said vacuum chamber;
- applying an electrical energy to said dopant gas in order to form dopant ions;
- directing said dopant ions toward said substrate by a voltage by ion implantation which uses a plasma source in order to introduce said ions into portions of said semiconductor layer;
- and
- performing a rapid thermal annealing on said semiconductor layer after introduction of said ions.
A method of manufacturing a thin film transistor comprising the steps:
- placing a substrate having a semiconductor layer formed thereover in a plasma doping chamber;
- introducing ions of an impurity to selected portions of said semiconductor layer by plasma doping in said plasma doping chamber;
- transferring said substrate to an annealing chamber from said plasma doping chamber;
- performing a rapid thermal annealing on said semiconductor layer in said annealing chamber.
A method of manufacturing a thin film transistor comprising the steps of:
- forming an insulating film including a gate insulator on a semiconductor layer formed over a substrate;
- forming a gate electrode on said gate insulator;
- introducing ions of an impurity to said semiconductor layer with said gate electrode used as a mask;
- and
- performing a rapid thermal annealing on said semiconductor layer to activate said impurity.
A method of manufacturing a thin film transistor comprising the steps of:
- forming an insulating film including a gate insulator on a semiconductor layer formed over a substrate;
- forming a gate electrode on said gate insulator;
- introducing ions of an impurity to said semiconductor layer with said gate electrode used as a mask;
- and
- performing an annealing with an infra red light on said semiconductor layer to activate said impurity.
A method of manufacturing an electronic device comprising the following sequential steps of:
- (a) forming at least first and second semiconductor islands over a substrate, each of said first and second semiconductor islands having a gate insulating layer and a gate electrode formed thereon;
- (b) introducing only the first semiconductor islands with ions of boron with the associated gate electrode used as a mask while covering the second semiconductor island with a resist mask;
- (c) removing said resist mask by ashing;
- (d) introducing both the first and second semiconductor islands with ions of phosphorous with the associated gate electrodes used as masks;
- and
- (e) rapid thermal annealing said first and second semiconductor islands.
Dependencies are inferred from the claim text.