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US 5,314,839 AGranted
Solid state device fabrication method including a surface treatment step with a neutral particle beam with an energy between 10ev and 100ev
AssigneeHitachi, Ltd.
InventorsTatsumi Mizutani, Takashi Yunogami, Kenetsu Yokokawa, Nobuyoshi Kobayashi
Life of this patent
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Abstract
To improve the characteristics of oxides and other insulators formed by conventional techniques, particularly to improve its density, relative dielectric constant, resistance to acid, resistance to reduction and other characteristics, and to provide solid state devices or socharacteristics, the surfaces of the silicon oxide insulator, or the like, is irradiated with electrically neutral particles.
Claims45
A surface treatment method, comprising:
- projecting a neutral particle beam having kinetic energy of at least 10 eV and no more than 100 eV onto the surface of an oxide or fluoride sufficiently to enhance at least one of surface layer density, surface layer refractive index, surface layer dielectric constant, and surface layer resistance to reduction.
A method of fabricating an electronic device, comprising:
- providing a substrate;
- forming and stacking thin films of semiconductor material, conducting metal and insulators in stacked relationship and in fine patterns to form an integrated circuit;
- and
- prior to forming and stacking a film on an insulator film, irradiating the insulator film with a neutral particle beam having kinetic energy of at least 10 eV and no more than 100 eV sufficiently to alter density of the insulator film to a depth of at least 4 nm.
1 more element
A method of fabricating an electronic device, comprising:
- providing a substrate;
- forming and stacking thin films of semiconductor material, conducting metal and insulators in stacked relationship and in fine patterns to form an integrated circuit, an wherein said forming forms a silicon oxide insulator film to a thickness of not more than 1 .mu.m;
- and
- prior to forming and stacking a film on an insulator film, irradiating the insulator film with a neutral particle beam having kinetic energy of at least 10 eV and no more than 100 eV sufficiently to increase density of the insulator film to a depth of at least 4 nm.
1 more element
Dependencies are inferred from the claim text.