Y10S 148/01
Bipolar transistors-ion implantation
Y10S148/01 (Bipolar transistors-ion implantation) appears on 274 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 274
- Published applications
- 1
- Assignees
- 77
- Inventors
- 374
- Latest grant
- 27 Aug 2002
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 16 | 0 |
| 1987 | 14 | 0 |
| 1988 | 4 | 0 |
| 1989 | 29 | 0 |
| 1990 | 9 | 0 |
| 1991 | 23 | 0 |
| 1992 | 16 | 0 |
| 1993 | 16 | 0 |
| 1994 | 16 | 0 |
| 1995 | 22 | 0 |
| 1996 | 44 | 0 |
| 1997 | 24 | 0 |
| 1998 | 16 | 0 |
| 1999 | 11 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Angled implant to improve high current operation of bipolar transistors27 Aug 2002US 6,440,812 B2Micron Technology, Inc.
- Semiconductor device with intrinsic base diffusion layer, extrinsic base diffusion layer, and common base diffusion11 Jun 2002US 6,404,039 B1Mitsubishi Denki Kabushiki Kaisha
- Method of manufacturing a self-aligned vertical bipolar transistor22 May 2001US 6,235,601 B1Philips Electronics North America Corporation
- BiCMOS process for counter doped collector26 Sep 2000US 6,124,180 AIntel Corporation
- Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer22 Feb 2000US 6,028,345 ATexas Instruments Incorporated
Most cited
By later US patents
- Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI76US 5,583,059 AInternational Business Machines Corporation · 1996
- Transistors having bases with different shape top surfaces66US 5,389,552 ANational Semiconductor Corporation · 1995
- Enhanced performance bipolar transistor process59US 5,369,042 ATexas Instruments Incorporated · 1994
- Heterojunction bipolar transistor with silicon-germanium base59US 5,506,427 ANEC Corporation · 1996
- Enhanced performance bipolar transistor process57US 5,407,842 ATexas Intruments Incorporated · 1995