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US 6,124,180 AGranted
BiCMOS process for counter doped collector
AssigneeIntel Corporation
InventorsStephen T. Chambers, Richard G. Taylor
Life of this patent
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Abstract
A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.
Claims9
In the fabrication of a BiCMOS integrated circuit where a bipolar transistor is formed in a substrate region of a first conductivity type, the improvement comprising the steps of:
- forming a base region in said substrate region by implanting ions of a second conductivity type into said first conductivity type substrate region using at least two different energy levels, the lower energy level for implanting said second type conductivity ions into said substrate region so as to form an active base region, the higher energy level for implanting said second conductivity type ions deeper into said substrate region than the lower energy level implant so as to form a more lightly doped first conductivity type substrate region near said base region;
- and
- forming an emitter region in said base region over said more lightly doped first conductivity type substrate region.
In the fabrication of a BiCMOS integrated circuit where an npn bipolar transistor is formed in an n-type substrate region, the improvement comprising the steps of:
- forming a base region in said n-type region by implanting boron ions into said n-type region using at least two different energy levels, the lower of said energy levels for implanting said boron ions into said substrate so as to form an active base region, the higher of said energy levels for implanting said boron ions deeper into said n-type region than said boron ions of the lower energy level implant so as to form a more lightly doped n-type region near the junction of said n-type region and said base region;
- and
- forming an emitter region in said base region over said more lightly doped n-type region.
Dependencies are inferred from the claim text.