Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer
AssigneeTexas Instruments Incorporated
InventorF. Scott Johnson
Life of this patent
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Abstract
A bipolar transistor (100) and a method for forming the same. A diffusion source dielectric layer (118) is deposited over a semiconductor body (101). An emitter window (116) is then etched through the diffusion source dielectric layer (118). An extrinsic base region (110) is diffused from the diffusion source dielectric layer (118). The intrinsic base region (108) is then implanted. Base-emitter spacers (120) are then formed followed by the emitter electrode (124) and emitter region (126). The extrinsic base region (110) is self-aligned to the emitter eliminating the alignment tolerances for the lateral diffusion of the extrinsic base implant and an extrinsic base implant.
Claims9
A single polysilicon bipolar transistor comprising:
- a collector region;
- an intrinsic base region within said collector region;
- an emitter region within said intrinsic base region;
- and
- an extrinsic base region self-aligned with said emitter region.
A single polysilicon bipolar transistor comprising:
- a collector region;
- an intrinsic base region within said collector region;
- an emitter region within said intrinsic base region;
- an extrinsic base region self-aligned with said emitter region;
- an emitter electrode in contact with said emitter region;
- a diffusion source barrier layer on a portion of said extrinsic base region, said diffusion source barrier layer separating said extrinsic base region from said emitter electrode;
- and
- a base-emitter spacer adjacent said diffusion source barrier layer for providing spacing between the ends of said emitter region and said intrinsic base region.
Dependencies are inferred from the claim text.