Y10S 148/129
Pulse doping
Y10S148/129 (Pulse doping) appears on 3 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 3
- Published applications
- 0
- Assignees
- 2
- Inventors
- 6
- Latest grant
- 31 May 1994
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of shallow junction formation in semiconductor devices using gas immersion laser doping31 May 1994US 5,316,969 AThe Board of Trustees of the Leland Stanford Junior University
- Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system15 Aug 1978US 4,106,959 ABell Telephone Laboratories, Incorporated
- High efficiency gallium arsenide impatt diodes12 Oct 1976US 3,986,192 ABell Telephone Laboratories, Incorporated
No published applications in this class yet.
Most cited
By later US patents
- Method of shallow junction formation in semiconductor devices using gas immersion laser doping23US 5,316,969 AThe Board of Trustees of the Leland Stanford Junior University · 1994
- High efficiency gallium arsenide impatt diodes6US 3,986,192 ABell Telephone Laboratories, Incorporated · 1976
- Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system2US 4,106,959 ABell Telephone Laboratories, Incorporated · 1978