Method of shallow junction formation in semiconductor devices using gas immersion laser doping
AssigneeThe Board of Trustees of the Leland Stanford Junior University
InventorsEmi Ishida, Thomas W. Sigmon, William T. Lynch
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Abstract
Shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere including the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. A silicide layer can be placed over the surface of the semiconductor material prior to irradiation with the dopant being driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms prior to irradiating the surface region.
Claims19
A method of doping a surface region in a surface of a semiconductor body comprising the steps of
- (a) masking said surface with a reflective material with said surface region exposed,
- (b) immersing said semiconductor body in an atmosphere including a dopant, with said surface adsorbing dopant atoms, and
- (c) irradiating said surface with a pulsed radiation beam of sufficient intensity to drive into said surface region atoms of said dopant without melting said semiconductor body, said dopant atoms being replenished on said surface between laser pulses.
A method of doping a surface region in a surface of a semiconductor body comprising the steps of
- (a) forming a silicide layer on said surface of said semiconductor body,
- (b) immersing said semiconductor body and silicide layer in an atmosphere including a dopant, with said silicide layer adsorbing dopant atoms, and
- (c) irradiating said silicide layer with a pulsed radiation beam of sufficient energy to drive atoms into said silicide layer, said dopant atoms being replenished on said surface between laser pulses.
Dependencies are inferred from the claim text.