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US 3,986,192 AGranted
High efficiency gallium arsenide impatt diodes
AssigneeBell Telephone Laboratories, Incorporated
InventorsJames Vincent DiLorenzo, William Charles Niehaus, Lawrence John Varnerin, Jr.
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Abstract
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.
Claims3
A high efficiency gallium arsenide Schottky barrier diode comprising:
- a. a gallium arsenide substrate having two major opposed surfaces;
- b. an electrical contact covering at least a portion of a first major surface of the substrate;
- c. at least one epitaxially deposited gallium arsenide layer covering at least a portion of a second major surface of the substrate and including a first region of relatively higher concentration of impurity as compared with the deposited layer;
- and
- d. a rectifying barrier contact contacting the epitaxially deposited layer,
- characterized in that the epitaxially deposited gallium arsenide layer further includes a second region of relatively higher concentration of impurity, located between the first region and the substrate.
3 more elements
Dependencies are inferred from the claim text.