Y10S 148/116
Oxidation, differential
Y10S148/116 (Oxidation, differential) appears on 71 US grants and 26 published applications in this corpus.
Search patents in Y10S- Granted patents
- 71
- Published applications
- 26
- Assignees
- 31
- Inventors
- 86
- Latest grant
- 29 Jul 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 5 | 0 |
| 1997 | 5 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 4 |
| 2002 | 4 | 6 |
| 2003 | 6 | 2 |
| 2004 | 3 | 4 |
| 2005 | 3 | 3 |
| 2006 | 5 | 2 |
| 2007 | 1 | 2 |
| 2008 | 1 | 2 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 1 |
| 2014 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods for reoxidizing an oxide and for fabricating semiconductor devices29 Jul 2014US 8,790,982 B2Micron Technology, Inc.
- Structures including an at least partially reoxidized oxide material23 Jul 2013US 8,492,851 B2Micron Technology, Inc.
- Method for fabricating semiconductor integrated circuit device21 Sep 2010US 7,799,690 B2Renesas Electronics Corporation
- Ion-assisted oxidation methods and the resulting structures13 May 2008US 7,371,697 B2Micron Technology, Inc.
- Method for fabricating semiconductor integrated circuit device31 Jul 2007US 7,250,376 B2Renesas Technology Corp.
- Methods for reoxidizing an oxide and for fabricating semiconductor devices21 Nov 2013US 2013/0309855 A1Micron Technology, Inc.
- Ion-assisted oxidation methods and the resulting structures28 Aug 2008US 2008/0203542 A1Micron Technology, Inc.
- Method for fabricating semiconductor intergrated circuit device21 Feb 2008US 2008/0045027 A1Renesas Electronics Corporation
- Ion-assisted oxidation methods and the resulting structures15 Mar 2007US 2007/0059943 A1Micron Technology, Inc.
- Electron emitters with dopant gradient8 Mar 2007US 2007/0052339 A1
Most cited
By later US patents
- Method for forming an insulator between layers of conductive material236US 4,234,362 AInternational Business Machines Corporation · 1980
- AlGaAs native oxide96US 5,262,360 AThe Board of Trustees of the University of Illinois · 1993
- Oxidation enhancement in narrow masked field regions of a semiconductor wafer95US 5,358,894 AMicron Technology, Inc. · 1994
- Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines92US 4,192,059 ARockwell International Corporation · 1980
- Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching84US 4,209,349 AInternational Business Machines Corporation · 1980