AlGaAs native oxide
AssigneeThe Board of Trustees of the University of Illinois
InventorsNick Holonyak, Jr., John M. Dallesasse
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Abstract
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
Claims67
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material which comprises exposing an aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing Group III-V semiconductor material to a native oxide, the thickness of said native oxide being about 1.1 times the thickness of or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted.
A method of forming a native oxide from Al.sub.x Ga.sub.l-x As wherein x is about 0.7 or greater which comprises exposing an Al.sub.x Ga.sub.l-x As semiconductor material wherein x is about 0.7 or greater to an atmosphere of nitrogen and water vapor and a temperature of between about 400.degree. to about 450.degree. C. to convert at least a portion of said semiconductor material to a native oxide having a thickness substantially the same as or less than the thickness of that portion of said Al.sub.x Ga.sub.l-x As semiconductor material thus converted.
A method of forming a native oxide from Al.sub.x Ga.sub.l-x As wherein x is about 0.7 or greater which comprises exposing an Al.sub.x Ga.sub.l-x As semiconductor material wherein x is about 0.7 or greater to an atmosphere of nitrogen and water vapor and a temperature in the range of over about 600.degree. C. to about 1100.degree. C. for a time period of up to about 60 seconds to convert at least a portion of said semiconductor material to a native oxide having a thickness substantially the same as or less than the thickness of that portion of said Al.sub.x Ga.sub.l-x As semiconductor material thus converted.
Dependencies are inferred from the claim text.