Ion-assisted oxidation methods and the resulting structures
AssigneeMicron Technology, Inc.
InventorsLi Li, Pai-Hung Pan
Life of this patent
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Abstract
Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over diffusion regions, such as source and drain regions, in a substrate. The oxide layer may overlie the substrate and is proximate a gate structure on the substrate. The at least one oxidant may be oxygen, water, ozone, or hydrogen peroxide, or a mixture thereof. These oxidation methods provide a low-temperature oxidation process, less oxidation of the sidewalls of conductive layers in the gate structure, and less current leakage to the substrate from the gate structure.
Claims30
A method for decreasing a dielectric constant of an oxygen-containing dielectric material, comprising:
- bombarding at least one of oxygen atoms of an oxygen-containing dielectric material on a semiconductor substrate and oxygen atoms proximate to the oxygen-containing dielectric material with at least one inert ion in an atmosphere comprising the at least one ion of an inert atom, hydrogen, and at least one oxidant to energize the oxygen atoms.
An oxidation method, comprising:
- bombarding oxygen atoms located substantially over at least one diffusion region of a semiconductor device substrate with at least one ion of an inert atom in an atmosphere comprising the at least one ion, hydrogen, and at least one oxidant.
Dependencies are inferred from the claim text.