Y10S 148/02
Contacts, special
Y10S148/02 (Contacts, special) appears on 213 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 213
- Published applications
- 0
- Assignees
- 87
- Inventors
- 318
- Latest grant
- 23 Sep 2003
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 21 | 0 |
| 1977 | 16 | 0 |
| 1978 | 12 | 0 |
| 1979 | 8 | 0 |
| 1980 | 6 | 0 |
| 1981 | 14 | 0 |
| 1982 | 10 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 12 | 0 |
| 1987 | 4 | 0 |
| 1988 | 1 | 0 |
| 1989 | 10 | 0 |
| 1990 | 8 | 0 |
| 1991 | 9 | 0 |
| 1992 | 8 | 0 |
| 1993 | 8 | 0 |
| 1994 | 6 | 0 |
| 1995 | 12 | 0 |
| 1996 | 8 | 0 |
| 1997 | 11 | 0 |
| 1998 | 12 | 0 |
| 1999 | 6 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Laser alignment target23 Sep 2003US 6,624,524 B1Altera Corporation
- Strapping via for interconnecting integrated circuit structures26 Feb 2002US 6,350,645 B1Integrated Device Technology, Inc.
- Butted contact resistance of an SRAM by double VCC implantation30 Oct 2001US 6,310,397 B1Taiwan Semiconductor Manufacturing Company.Ltd
- Plug structure and process for forming stacked contacts and metal contacts on static random access memory thin film transistors24 Apr 2001US 6,222,214 B1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for improving the butted contact resistance of an SRAM by double Vcc implantation2 May 2000US 6,057,186 ATaiwan Semiconductor Manufacturing Company.Ltd
No published applications in this class yet.
Most cited
By later US patents
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Process for making integrated circuits having titanium nitride triple interconnect196US 4,804,636 ATexas Instruments Incorporated · 1989
- Method for forming pitch independent contacts and a semiconductor device having the same137US 5,219,793 AMotorola, Inc. · 1993
- Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers135US 4,663,831 AMotorola, Inc. · 1987
- Method for manufacturing a semiconductor device113US 4,309,224 ATokyo Shibaura Denki Kabushiki Kaisha · 1982