Method for forming pitch independent contacts and a semiconductor device having the same

A method for forming a pitch-independent contact in a semiconductor device, comprising the steps of:

• providing a semiconductor substrate having two conductive members formed thereon, each of the conductive members having an overlying dielectric layer;
• conformally depositing a first insulating material over the conductive members and the semiconductor substrate;
• conformally depositing a conductive etch stop layer which overlies the first insulating material;
• depositing a second insulating material overlying the conductive etch stop layer;
• etching the second insulating material selective to the underlying conductive etch stop layer to form a disposable frame structure which defines first and second spaced apart contact regions, the first contact region overlying at least a portion of one of the two conductive members and the conductive etch stop layer being exposed within both the first and second contact regions;
• removing the conductive etch stop layer exposed within the first and second contact regions to expose a portion of the first insulating material within each contact region;
• anisotropically etching the exposed portions of the first insulating material to form at least one sidewall spacer along a side of one of the conductive members and to expose a portion of the semiconductor substrate within the first contact region;
• forming a first contact in the first contact region which is electrically coupled to the exposed portion of the semiconductor substrate;
• removing the disposable frame structure to expose remaining portions of the conductive etch stop layer;
• and
• etching portions of the exposed conductive etch stop layer.

A method for forming a pitch-independent contact in a semiconductor device, comprising the steps of:

• providing a semiconductor substrate;
• depositing a first insulating layer over the semiconductor substrate;
• depositing an etch stop layer which overlies the first insulating layer;
• depositing a second insulating layer overlying the etch stop layer, the second insulating layer having the ability to be etched selectively to the etch stop layer;
• patterning the second insulating layer to form a frame structure, the frame structure having an opening which defines a contact region and exposes the etch stop layer within the contact region;
• removing the exposed etch stop layer within the contact region to expose a portion of the first insulating layer;
• anisotropically etching the exposed portion of the insulating layer within the contact region;
• forming a contact in the contact region;
• and
• removing the frame structure from the device.