Back to results
US 4,570,328 AGranted
Method of producing titanium nitride MOS device gate electrode
AssigneeMotorola, Inc.
InventorsJ. B. Price, Philip J. Tobin, Fabio Pintchovski, Christian A. Seelbach
Life of this patent
Estimating the term…
Abstract
An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.
Claims9
A method of making a metal oxide semiconductor device gate electrode and interconnect comprising the steps of:
- chemical vapor depositing at a reduced pressure below approximately 300 millitorr a layer of titanium nitride over a selected gate dielectric and interconnect area;
- and forming a layer of silicon in overlying relationship to said layer of titanium nitride.
A method of making a metal oxide semiconductor device gate electrode and interconnect comprising the steps of:
- placing a semiconductor wafer in a chamber at a temperature in the range of approximately 680.degree. C. to 800.degree. C;
- lowering the pressure in the chamber into the range of approximately 100 to 300 millitorr;
- providing a continuous flow of hydrogen gas into the chamber to substantially remove any oxygen;
- providing a continuous flow of titanium tetrachloride vapor and ammonia vapor into the chamber;
- continuing the process until a layer of titanium nitride of the desired thickness is formed on the semiconductor wafer and on a selected gate dielectric;
- and
- annealing in situ the layer of titanium nitride at a temperature of approximately 900.degree.-1000.degree. C.
4 more elements
Dependencies are inferred from the claim text.