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US 4,309,224 AGranted
Method for manufacturing a semiconductor device
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorTadashi Shibata
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Abstract
A method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electric conductive portion such as an electrode and/or conductor, which includes steps for doping the polycrystalline silicon layer with an impurity, and applying a radiation beam at least to part of the polycrystalline silicon layer after a heating step, thereby reducing the resistance of the polycrystalline silicon layer thereby to improve the operating speed of the device.
Claims6
A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating film on at least part of the surface of a semiconductor substrate;
- forming an electric conductive portion made of polycrystalline silicon layer doped with at least one impurity, at least on said insulating film;
- heating said semiconductor substrate to permit at least said electric conductive portion made of said polycrystalline silicon layer to be heated;
- and
- applying a radiation beam at least to said electric conductive portion after said heating step, thereby reducing the resistance value of said electric conductive portion.
2 more elements
Dependencies are inferred from the claim text.