Y10S 148/06
Gettering
Y10S148/06 (Gettering) appears on 96 US grants and 3 published applications in this corpus.
Search patents in Y10S- Granted patents
- 96
- Published applications
- 3
- Assignees
- 40
- Inventors
- 153
- Latest grant
- 6 Jun 2006
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 5 | 0 |
| 1986 | 7 | 0 |
| 1987 | 7 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 5 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 6 | 0 |
| 2000 | 8 | 0 |
| 2001 | 3 | 0 |
| 2002 | 5 | 1 |
| 2003 | 1 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 1 |
| 2006 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device and process for fabricating the same6 Jun 2006US 7,056,775 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and process for fabricating the same2 Aug 2005US 6,924,213 B2Semiconductor Energy Laboratory Co.Ltd.
- Fabrication of semiconductor gettering structures by ion implantation21 Jan 2003US 6,509,248 B1Micron Technology, Inc.
- Fabrication of semiconductor gettering structures by ion implantation12 Nov 2002US 6,479,875 B1Micron Technology, Inc.
- Semiconductor gettering structures15 Oct 2002US 6,465,873 B1Micron Technology, Inc.
- Semiconductor device and process for fabricating the same3 Nov 2005US 2005/0245053 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device for fabricating the same30 Jan 2003US 2003/0022467 A1Semiconductor Energy Laboratory Co.Ltd.
- Gettering regions and methods of forming gettering regions within a semiconductor wafer21 Feb 2002US 2002/0022346 A1Micron Technology, Inc.
Most cited
By later US patents
- Process for fabricating thin film transistor433US 5,529,937 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Method of fabricating a semiconductor device269US 5,426,064 ASemiconductor Energy Laboratory Co.Ltd. · 1995
- Method of removing a catalyst substance from the channel region of a TFT after crystallization199US 5,580,792 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Method to getter contamination in semiconductor devices118US 5,244,819 AHoneywell Inc. · 1993
- Method of gettering using backside polycrystalline silicon107US 4,053,335 AInternational Business Machines Corporation · 1977