Gettering regions and methods of forming gettering regions within a semiconductor wafer

A method of forming a gettering region within an Si semiconductor wafer comprising the following steps:

• providing a semiconductor material wafer;
• implanting phosphorus within the semiconductor material wafer to form a phosphorus implant region therein;
• implanting silicon within the semiconductor material wafer to form a silicon implant region, the silicon implant region having a peak concentration depth lying within the phosphorus implant region;
• and
• the combined silicon and phosphorus implants being provided to implant doses effective to form a metals gettering damage region which is entirely contained within the phosphorus implant region.

A method of forming a gettering region within an Si semiconductor wafer comprising the following steps:

• providing a semiconductor material wafer;
• implanting phosphorus within the semiconductor material wafer to form a phosphorus implant region therein;
• implanting silicon within the semiconductor material wafer to form a silicon implant region;
• and
• the step of implanting silicon occurring simultaneously with the step of implanting phosphorus.

A method of forming a gettering region within an Si semiconductor wafer, comprising:

• providing a semiconductor material wafer, the semiconductor material having an outer surface;
• implanting phosphorus within the semiconductor material wafer to form a phosphorus implant region within the wafer, the phosphorus implant region having a peak concentration depth, the phosphorus peak concentration depth being greater than or equal to about 1 microns beneath the outer surface;
• and
• implanting a neutral-conductivity-type dopant within the material wafer, the combined neutral-conductivity-type dopant implant and phosphorus implant forming a metals gettering damage region that is entirely contained within the phosphorus implant region.

A gettering region within an Si semiconductor material wafer comprising:

• a background region within the semiconductor material wafer, the background region comprising a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type;
• a second-type conductivity implant region entirely contained within the background region, the second-type implant region comprising a second-type conductivity enhancing dopant, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant;
• a metals gettering damage region entirely contained within the second-type implant region;
• and
• a gettering diode comprising the. first-type background region and the second-type implant region, the gettering diode surrounding the damage region.

A gettering region within an Si semiconductor material wafer comprising:

• a phosphorus implant region formed within a background p-type region in the semiconductor material;
• a silicon implant region having a peak silicon implant concentration depth located within the phosphorus implant region;
• and
• a metals gettering damage region encompassing the peak silicon implant concentration depth and being entirely contained within the phosphorus implant region, the phosphorus implant region and the background p-type region together forming a gettering diode which surrounds the damage region.