Method to getter contamination in semiconductor devices
AssigneeHoneywell Inc.
InventorJerry C. Yue
Life of this patent
Estimating the term…
Abstract
A frontside gettering method for removing metallic contamination from a thin film SOI or SOS silicon device. Damage sites are created by ion implantation into inactive regions of a silicon substrate. An annealing step causes metallic contamination to diffuse from the active device region to the inactive region. The inactive region material is removed prior to subsequent processing steps.
Claims15
A method of gettering metallic contamination in an integrated circuit wafer, comprising the steps of:
- providing an insulating substrate;
- providing a silicon substrate on said insulating substrate, said silicon substrate containing said metallic contamination;
- forming an oxide layer on said silicon substrate;
- forming a masking layer on said oxide layer, said masking layer having covered portions defining active device regions in said silicon substrate, said masking layer having exposed portions defining inactive regions in said silicon substrate;
- implanting ions into said inactive regions to create damage sites in said inactive region of said silicon substrate;
- performing at least a high temperature annealing step to cause said metallic contamination to migrate from said active device region to said damage sites;
- removing at least a portion of said inactive regions of said silicon substrate;
- and
- performing subsequent integrated circuit wafer processing steps.
A method to getter contamination in a silicon-on-insulator intergrated circuit device, comprising:
- providing a semiconductor substrate comprising a silicon layer on a buried oxide layer;
- forming an oxide layer on said silicon layer;
- forming a masking layer on said oxide layer;
- forming a photoresist mask on said masking layer, said photoresist mask having covered areas to define active device regions, said photoresist mask having exposed areas to define inactive regions;
- removing said masking layer and said oxide layer from said inactive regions;
- creating gettering sites in said inactive region of said silicon layer,
- performing at least a subsequent high temperature semiconductor processing step to cause said contamination to migrate to said gettering sites, and;
- removing said inactive region of said silicon layer.
A method to getter contamination in a silicon-on-insulator intergrated circuit device, comprising:
- providing a sapphire substrate;
- providing a silicon layer on said sapphire substrate;
- forming an oxide layer on said silicon layer;
- forming a masking layer on said oxide layer;
- forming a photoresist mask on said masking layer, said photoresist mask having covered areas to define active device regions, said photoresist mask having exposed areas to define inactive regions;
- removing said masking layer and said oxide layer from said inactive regions;
- creating gettering sites in said inactive region of said silicon layer,
- performing at least a subsequent high temperature semiconductor processing step to cause said contamination to migrate to said gettering sites, and;
- removing said inactive region of said silicon layer.
Dependencies are inferred from the claim text.