Semiconductor gettering structures

A gettering structure comprising:

• a recess in a semiconductor substrate, said recess being filled with a dielectric material and having a bottom, said semiconductor substrate having an upper surface;
• an implantation region below the upper surface of said semiconductor substrate, above the bottom of the recess, and lateral to the recess;
• and
• a gettering region below and separated from said bottom, said gettering region having:
• a vertical concentration profile of a gettering material that has a first minimum below said bottom, a maximum below said first minimum, and a second minimum below said maximum;
• and
• a horizontal concentration profile of a gettering material that has a first minimum proximate a first wall of said recess, a maximum substantially centered upon said recess, and a second minimum proximate a second wall of said recess.

A microelectronic device comprising:

• at least one recess in a semiconductor substrate, said recess having a bottom;
• a gettering region below, aligned with, and separated from said bottom, said gettering region having lateral dimensions substantially equivalent to lateral dimensions of said recess, said gettering region having:
• a vertical concentration profile of a gettering material that has a first minimum below said bottom, a maximum below said first minimum, and a second minimum below said maximum;
• and
• a horizontal concentration profile of a gettering material that has a first minimum proximate a first wall of said recess, a maximum substantially centered upon said recess, and a second minimum proximate a second wall of said recess;
• and
• a dielectric material substantially filling said recess.

A microelectronic device comprising:

• a semiconductor substrate having therein:
• at least one recess having a bottom;
• a diode junction adjacent to the recess;
• and
• an implantation region above the bottom of the recess;
• a gettering region below, aligned with, and separated from the bottom of the recess, the gettering region having lateral dimensions substantially equivalent to lateral dimensions of the recess, the diode junction being electrically unaffected by the gettering region, said gettering region having:
• a vertical concentration profile of a gettering material that has a first minimum below said bottom, a maximum below said first minimum, and a second minimum below said maximum;
• and
• a horizontal concentration profile of a gettering material that has a first minimum proximate a first wall of said recess, a maximum substantially centered upon said recess, and a second minimum proximate a second wall of said recess;
• and
• a dielectric material substantially filling said recess.

A gettering structure comprising:

• a recess in a semiconductor substrate, said recess having a bottom;
• and
• a gettering region below and separated from said bottom, said gettering region having:
• a vertical concentration profile of a gettering material that has a first minimum below said bottom, a maximum below said first minimum, and a second minimum below said maximum;
• and
• a horizontal concentration profile of a gettering material that has a first minimum located laterally beyond the recess, a maximum substantially centered upon said recess, and a second minimum located laterally beyond the recess.