Y10S 148/158
Sputtering
Y10S148/158 (Sputtering) appears on 39 US grants and 8 published applications in this corpus.
Search patents in Y10S- Granted patents
- 39
- Published applications
- 8
- Assignees
- 28
- Inventors
- 62
- Latest grant
- 11 Sep 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 5 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 2 |
| 2003 | 0 | 2 |
| 2004 | 1 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 2 | 0 |
| 2009 | 1 | 3 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Hafnium alloy target11 Sep 2012US 8,262,816 B2JX Nippon Mining & Metals Corporation
- Hafnium alloy target14 Aug 2012US 8,241,438 B2JX Nippon Mining & Metals Corporation
- Hafnium alloy target and process for producing the same22 Nov 2011US 8,062,440 B2JX Nippon Mining & Metals Corporation
- High purity tantalum, products containing the same, and methods of making the same8 Sep 2009US 7,585,380 B2Cabot Corporation
- Hafnium alloy target and process for producing the same2 Dec 2008US 7,459,036 B2Nippon Mining & Metals Co., Ltd.
- Hafnium Alloy Target and Process for Producing the Same5 Mar 2009US 2009/0057142 A1Nippon Mining & Metals Co., Ltd.
- Hafnium Alloy Target and Process for Producing the Same26 Feb 2009US 2009/0050475 A1Nippon Mining & Metals Co., Ltd.
- Hafnium Alloy Target and Process for Producing the Same1 Jan 2009US 2009/0000704 A1Nippon Mining & Metals Co., Ltd.
- Hafnium alloy target and process for producing the same24 Aug 2006US 2006/0189164 A1Nikko Materials Co., Ltd.
- High purity tantalum, products containing the same, and methods of making the same11 Sep 2003US 2003/0168131 A1Cabot Corporation
Most cited
By later US patents
- Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition113US 4,579,609 AMassachusetts Institute of Technology · 1986
- Process for filling submicron spaces with dielectric112US 5,270,264 AIntel Corporation · 1993
- Method of manufacturing a semiconductor film and a semiconductor device by sputtering in a hydrogen atmosphere and crystallizing80US 5,236,850 ASemiconductor Energy Laboratory Co.Ltd. · 1993
- High purity tantalum, products containing the same, and methods of making the same59US 6,348,113 B1Cabot Corporation · 2002
- Method of manufacturing a trench filled with an insulating material in a semiconductor substrate46US 4,839,306 AOki Electric Industry Co., Ltd. · 1989