Method of manufacturing a trench filled with an insulating material in a semiconductor substrate
AssigneeOki Electric Industry Co., Ltd.
InventorHidetoshi Wakamatsu
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Abstract
A method of manufacturing a trench filled with an insulation material in a semiconductor substrate which includes the steps of forming a trench in the substrate, subjecting the substrate to an RF bias sputtering to form an oxide layer on the substrate, form a slope at an upper corner of the trench and produce a roundness at a lower corner of the trench, and filling the trench with the insulation material.
Claims8
A method of manufacturing a trench filled with an insulation material in a semiconductor substrate including the steps of:
- forming a trench in the substrate;
- subjecting the substrate to an RF bias sputtering to form an oxide layer on the substrate, form a slope at an upper corner of the trench and to produce a roundness at a lower corner of the trench;
- removing said oxide layer;
- and
- filling the trench with the insulating material.
A method of manufacturing a trench filled with an insulating material in a semiconductor substrate including the steps of:
- forming a trench in the substrate;
- subjecting the structure obtained by said step to an RF bias sputtering to form an oxide layer on the substrate, form a slope at an upper corner of the trench and to produce a roundness in a lower corner of the trench;
- removing said oxide layer;
- subjecting the structure obtained by said steps to a high temperature oxidization treatment to remove etching damages caused by forming the trench, the slope and the roundness, so as to round the slope and maintain the roundness and to keep an inner wall of the trench smooth;
- removing a silicon oxide layer formed by said oxidization;
- and
- filling the trench with the insulation material.
Dependencies are inferred from the claim text.