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AssigneeNikko Materials Co., Ltd.
InventorsTakeo Okabe, Shuichi Irumata, Yasuhiro Yamakoshi, Hirohito Miyashita, Ryo Suzuki
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Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 350 from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
A hafnium alloy target containing at least one of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, and having a habit plane ratio of a plane {002} and of three planes {103}, {014} and {015} lying within 35° from {002} of at least 55%, a variation in a total sum of intensity ratios of these four planes depending on locations of 20% or less, an average crystal grain size of 1-100 μm, impurities of Fe, Cr and Ni of 1 wtppm or less, respectively, and an average roughness Ra of an erosion face of said target of 0.01-2 μm.
2-10. (canceled)
A method of manufacturing a hafnium alloy target, comprising the steps of hot forging and rolling an ingot or billet of hafnium alloy and thereafter heating said ingot or billet to 800-1300° C. for at least 15 minutes in an atmosphere, a vacuum, or an inert gas atmosphere, said rolling step is hot rolling or cold rolling, and said target is produced such that said target contains at least one of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf and has a habit plane ratio of a plane {002} and of three planes {103}, {014} and {015} lying within 35° from {002} of at least 55%, a variation in a total sum of intensity ratios of these four planes depending on locations of 20% or less, an average crystal grain size of 1-100 μm, impurities of Fe, Cr and Ni of 1 wtppm or less, respectively, and an average roughness Ra of an erosion face of said target of 0.01-2 μm.
Dependencies are inferred from the claim text.