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US 5,236,850 AGranted
Method of manufacturing a semiconductor film and a semiconductor device by sputtering in a hydrogen atmosphere and crystallizing
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
Life of this patent
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Abstract
A method of manufacturing a semiconductor film and a semiconductor device is disclosed. The method comprises the steps of: forming a non-single crystal semiconductor film on a surface by sputtering in an atmosphere comprising hydrogen; and crystallizing the non-single crystal semiconductor film at a temperature of 450.degree. C. to 750.degree. C.
Claims21
A method of manufacturing a semiconductor device comprising the steps of:
- forming a non-single crystal semiconductor film layer on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas where a proportion of the hydrogen in the atmosphere is not lower than 20 volume %;
- crystallizing said non-single crystal semiconductor film layer by heating the film layer to form a semiconductive current path connecting a current source region which is adapted for connection to an external source of current and a current drain region adapted for connection to a receiver of current, so that said current path conveys current from said current source region to said current drain region;
- and
- forming said current source region and said current drain region at opposite ends of the crystallized film layer.
1 more element
A method of manufacturing an insulated gate field effect transistor comprising the steps of:
- forming a non-single crystal semiconductor film on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas where a proportion of the hydrogen in the atmosphere is not lower than 20 volume %;
- crystallizing said non-single crystal semiconductor film by heating said film;
- forming a gate electrode adjacent to said non-single crystal semiconductor film with a gate insulator therebetween so that a channel region is defined by said gate electrode where said gate electrode may be formed either before the formation of said non-single crystal semiconductor film or after crystallizing said non-single crystal semiconductor film;
- and
- forming source and drain semiconductor regions adjacent to said channel region.
2 more elements
A method of manufacturing an insulated-gate field effect transistor comprising the steps of:
- forming a non-single crystal semiconductor film on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas;
- crystallizing said non-single crystal semiconductor film;
- and
- annealing said crystallized non-single crystal semiconductor film in a hydrogen containing atmosphere.
1 more element
Dependencies are inferred from the claim text.