Y10S 148/002
Amphoteric doping
Y10S148/002 (Amphoteric doping) appears on 4 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 4
- Published applications
- 0
- Assignees
- 4
- Inventors
- 11
- Latest grant
- 9 Feb 1993
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for improving low temperature current gain of bipolar transistors9 Feb 1993US 5,185,276 AInternational Business Machines Corporation
- Method of growing III-V semiconductor layers with high effective hole concentration3 Jul 1990US 4,939,102 AAmerican Telephone and Telegraph Company
- Process for the deposition by epitaxy of a doped material11 Jul 1989US 4,847,216 ACentre National d'Etudes des Telecommunications
- Lateral epitaxial growth by seeded solidification1 Feb 1983US 4,371,421 AMassachusetts Institute of Technology
No published applications in this class yet.
Most cited
By later US patents
- Lateral epitaxial growth by seeded solidification77US 4,371,421 AMassachusetts Institute of Technology · 1983
- Method for improving low temperature current gain of bipolar transistors10US 5,185,276 AInternational Business Machines Corporation · 1993
- Method of growing III-V semiconductor layers with high effective hole concentration9US 4,939,102 AAmerican Telephone and Telegraph Company · 1990
- Process for the deposition by epitaxy of a doped material6US 4,847,216 ACentre National d'Etudes des Telecommunications · 1989