Lateral epitaxial growth by seeded solidification

A method of forming a semiconductor body comprising:

• a. forming a first layer of amorphous or polycrystalline material over a substrate;
• b. disposing a single crystalline seed material adjacent a surface of said first layer and in contact with at least a portion of said first layer;
• c. forming a second layer adjacent and in contact over a substantial portion of said first layer, said second layer comprising material adapted to serve as a wetting agent with respect to said first layer and said substrate;
• d. heating said first layer to melt the first layer;
• e. solidifying the first layer to transform the layer material to large grain substantially single crystal material.

A method of forming a semiconductor body comprising:

• a. forming a first layer of amorphous or polycrystalline material over a crystallization substrate containing single crystalline seed material;
• b. exposing a portion of said substrate containing single crystalline seed material to a surface of said first layer;
• c. forming a second layer over a substantial portion of said first layer;
• d. heating said first layer to melt the first layer;
• e. solidifying the first layer to transform the first layer material to large grain substantially single crystal material, the crystallinity of said first layer being influenced by the seed material.