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US 4,847,216 AGranted
Process for the deposition by epitaxy of a doped material
AssigneeCentre National d'Etudes des Telecommunications
InventorsFrancois A. d'Avitaya, Yves Campidelli
Life of this patent
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Abstract
The process consists of depositing at least one layer of a doped material on a heated substrate placed in an enclosure, subjecting the substrate surface to the action of a molecular flux of the material, to the action of a doping particle beam and to the action of an electron beam.
Claims10
A process for depositing a semiconductor layer of a doped material on the surface of a substrate by epitaxy, consisting essentially of:
- heating said substrate in a tight enclosure;
- forming a beam of doping unionized particles of an aggregate molecular structure of the type X.sup.4 by evaporation;
- forming an electron beam of a determined density;
- forming a molecular flux of said material which constitutes said semiconductor layer;
- and
- subjecting the substrate surface to the combined action of said molecular flux and said particle beam while simultaneously irradiating at least a portion of the substrate surface with said electron beam in order to increase the quantity of doping particles within the portion of the material layer exposed to said electron beam.
3 more elements
A process for depositing a semiconductor layer of a doped material on the surface of a monocrystalline silicon substrate by epitaxy, consisting essentially of:
- heating said substrate in a tight enclosure;
- forming a beam of dopoing unionized particles of an aggregate molecular structure of the type X.sub.4 by evaporation of an element selected from the group consisting of arsenic, phosphorus, antimony and boron;
- forming an electron beam of a determined density;
- forming a molecular flux of the material which constitutes said semiconductor layer;
- and
- subjecting the substrate surface to the combined action of said molecular flux and said particle beam while simultaneously irradiating at least a portion of the substrate surface with said electron beam in order to increase the quantity of doping particles within the portion of the material layer exposed to said electron beam.
3 more elements
Dependencies are inferred from the claim text.