Y10S 148/131
Reactive ion etching rie
Y10S148/131 (Reactive ion etching rie) appears on 99 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 99
- Published applications
- 0
- Assignees
- 48
- Inventors
- 171
- Latest grant
- 20 Jul 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 9 | 0 |
| 1981 | 10 | 0 |
| 1982 | 8 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 6 | 0 |
| 1988 | 2 | 0 |
| 1989 | 8 | 0 |
| 1990 | 8 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 6 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for manufacturing a semiconductor device with stabilization of a bipolar transistor and a schottky barrier diode20 Jul 1999US 5,926,705 ANEC Corporation
- Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact27 Aug 1996US 5,550,065 AMotorola, Inc.
- Method for forming solder bumps in semiconductor devices16 Apr 1996US 5,508,229 ANational Semiconductor Corporation
- Method of manufacturing a semiconductor device18 Oct 1994US 5,356,823 AKabushiki Kaisha Toshiba
- Method of fabricating a bottom and top gated thin film transistor20 Sep 1994US 5,348,899 AMicron Semiconductor, Inc.
No published applications in this class yet.
Most cited
By later US patents
- Selective reactive ion etching of polysilicon against SiO.sub.2 utilizing SF.sub.6 -Cl.sub.2 -inert gas etchant269US 4,214,946 AInternational Business Machines Corporation · 1980
- Method for forming an insulator between layers of conductive material236US 4,234,362 AInternational Business Machines Corporation · 1980
- Method for forming isolated regions of silicon utilizing reactive ion etching158US 4,104,086 AInternational Business Machines Corporation · 1978
- Method for forming solder bumps in semiconductor devices143US 5,508,229 ANational Semiconductor Corporation · 1996
- Method of making two-phase charge coupled device134US 5,292,682 AEastman Kodak Company · 1994