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US 4,104,086 AGranted
Method for forming isolated regions of silicon utilizing reactive ion etching
AssigneeInternational Business Machines Corporation
InventorsJames Allan Bondur, Hans Bernhard Pogge
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Abstract
A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.
Claims21
A method for isolating regions of silicon comprising:
- providing a silicon body composed principally of one conductivity;
- forming tapered sided openings of less than about 4 micrometers in width at the surface in said body by reactive ion etching;
- the taper of said tapered sided openings being greater than about 2.degree. from the vertical and terminating into the substantially flat bottom of said openings;
- thermally oxidizing the surfaces of said openings;
- filling said thermally oxidized openings with a dielectric material wherein the said regions of silicon are isolated;
- and
- removing said dielectric material from above the surface of said body wherein the said openings are uniformly filled at the said surface.
4 more elements
A method for isolating regions of silicon comprising:
- providing a silicon body composed principally of one conductivity and having a layer of highly doped silicon;
- etching tapered sided openings in said body and through said highly doped layer in a silicon reactive chlorine specie ambient having a pressure of between about 2 to 50 micrometers, chlorine specie of gas between about 2 to 10 percent, and etch rate between about 0.03 and 0.08 micrometers per minute;
- thermally oxidizing the surfaces of said openings;
- filling said thermally oxidized openings with a dielectric material wherein the said regions of silicon are isolated.
1 more element
Dependencies are inferred from the claim text.