Y10S 148/082
Ion implantation fets/coms
Official title: Ion implantation FETs/COMs
Y10S148/082 (Ion implantation fets/coms) appears on 146 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 146
- Published applications
- 0
- Assignees
- 58
- Inventors
- 211
- Latest grant
- 30 Oct 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 18 | 0 |
| 1986 | 17 | 0 |
| 1987 | 24 | 0 |
| 1988 | 12 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 8 | 0 |
| 1993 | 7 | 0 |
| 1994 | 8 | 0 |
| 1995 | 4 | 0 |
| 1996 | 11 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods of forming field effect transistors30 Oct 2001US 6,309,935 B1Micron Technology, Inc.
- Method of forming a field effect transistor and method of forming CMOS integrated circuitry27 Apr 1999US 5,897,357 AMicron Technology, Inc.
- Semiconductor device with selectively patterned connection pad layer for increasing a contact margin6 Oct 1998US 5,818,091 ASamsung Electronics Co., Ltd.
- Method of forming a field effect transistor and method of forming CMOS integrated circuitry30 Jun 1998US 5,773,358 AMicron Technology, Inc.
- Method for manufacturing ISRC MOSFET5 May 1998US 5,747,356 AKorea Information & Communication Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Forming retrograde twin wells by outdiffusion of impurity ions in epitaxial layer followed by CMOS device processing147US 4,761,384 ASiemens Aktiengesellschaft · 1988
- BiCMOS process and process for forming bipolar transistors on wafers also containing FETs128US 4,987,089 AMicron Technology, Inc. · 1991
- Method for fabricating MOS transistors having gates with different work functions106US 4,745,079 AMotorola, Inc. · 1988
- Method of forming through holes by differential etching of stacked silicon oxynitride layers105US 4,543,707 AKabushiki Kaisha · 1985
- Method for fabricating a CMOS well structure95US 4,662,061 ATexas Instruments Incorporated · 1987