Methods of forming field effect transistors

A method of forming a field effect transistor, comprising:

• providing a gate structure over a semiconductor substrate, the gate structure comprising a conductively-doped polysilicon region and a silicon nitride layer over the conductively-doped polysilicon region;
• providing a layer of polysilicon over the substrate and over the silicon nitride layer of the gate structure, the polysilicon layer defining a pair of polysilicon outward projections extending from the semiconductor substrate adjacent the gate structure;
• and
• removing the layer of polysilicon from over the silicon nitride layer while leaving the polysilicon outward projections adjacent the gate structure.

A method of forming a field effect transistor comprising the following steps:

• providing a gate over a semiconductor substrate, the semiconductor substrate comprising silicon;
• forming a nitride dopant masking cap over the gate;
• providing a layer of polysilicon over the substrate, the polysilicon layer defining a pair of polysilicon outward projections extending from the semiconductor substrate adjacent the gate;
• while the nitride dopant masking cap is over the gate, conductively doping the pair of polysilicon projections with one of an n-type or a p-type conductivity enhancing dopant impurity;
• and
• providing an outgassing capping layer over the pair of polysilicon outward projections;
• providing oxide insulating sidewall spacers relative to the gate;
• while the outgassing capping layer is over the pair of polysilicon outward projections, out-diffusing the one of the n-type conductivity enhancing dopant impurity or the p-type conductivity enhancing dopant impurity from the pair of polysilicon projections into the silicon of the semiconductor substrate to provide one of NMOS or PMOS type diffusion regions, respectively, within the substrate adjacent the gate line.