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US 4,543,707 AGranted
Method of forming through holes by differential etching of stacked silicon oxynitride layers
AssigneeKabushiki Kaisha
InventorsToshiyo Ito, Jiro Ohshima
Life of this patent
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Abstract
A process of manufacturing a semiconductor device by which a through hole such as contact hole with an obtuse opening edge can be formed in an insulation or passivation layer. At least two silicon oxynitride layers in which the nitrogen to oxygen ratio differs from each other are formed on a semiconductor substrate. The etching rate of the top layer is greater than that of the second layer from the top. The stacked silicon oxynitride layers are then selectively etched to form a through hole with an obtuse opening edge.
Claims3
A process of producing a semiconductor device comprising the steps of:
- stacking at least two silicon oxynitride layers of which nitrogen to oxygen ratio differs from each other on a semiconductor substrate, in which the etching rate of the top layer is faster than that of the second layer from the top;
- and
- selectively etching the stacked silicon oxynitride layers to form a through hole in the same, thereby providing a through hole with an obtuse opening edge.
Dependencies are inferred from the claim text.