Y10S 148/101
Liquid phase epitaxy, lpe
Official title: Liquid Phase Epitaxy, LPE
Y10S148/101 (Liquid phase epitaxy, lpe) appears on 14 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 14
- Published applications
- 0
- Assignees
- 12
- Inventors
- 32
- Latest grant
- 7 Mar 2006
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Epitaxial growth of germanium photodetector for CMOS imagers7 Mar 2006US 7,008,813 B1Sharp Laboratories of America, Inc.
- Method of manufacturing a light-emitting semiconductor device substrate28 Mar 1995US 5,401,684 AShin-Etsu Handatai Co. Ltd.
- Method for producing silicon dioxide film which prevents escape of Si component to the environment5 Jul 1994US 5,326,720 ANippon Sheet Glass Co., Ltd.
- Forming thin liquid phase epitaxial layers29 Jun 1993US 5,223,079 AMotorola, Inc.
- Epitaxial growth method9 Feb 1993US 5,185,288 AHewlett-Packard Company
No published applications in this class yet.
Most cited
By later US patents
- Epitaxial substrate for high-intensity led, and method of manufacturing same49US 4,902,356 AMitsubishi Kasei Corporation · 1990
- Epitaxial growth of germanium photodetector for CMOS imagers32US 7,008,813 B1Sharp Laboratories of America, Inc. · 2006
- Epitaxial growth method19US 5,185,288 AHewlett-Packard Company · 1993
- Method for liquid-phase thin film epitaxy15US 4,918,029 ASamsung Electronics Co., Ltd. · 1990
- Method and manufacturing a laser diode with buried active layer10US 4,963,507 ASiemens Aktiengesellschaft · 1990