Method for producing silicon dioxide film which prevents escape of Si component to the environment
AssigneeNippon Sheet Glass Co., Ltd.
InventorsTakuji Goda, Yasuto Sakai, Akihiro Hishinuma, Hideo Kawahara, Shigehito Deki
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Abstract
A method for producing a silicon dioxide film by contacting a substrate such as glass with a treating liquid comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide to deposit a silicon dioxide film on the surface of the substrate, the method being characterized by providing a device for preventing an Si component from escaping from the treating liquid. According to the method, pollution of working environment and decrease in concentration of solution do not occur during the formation of silicon dioxide film.
Claims7
A method for producing a silicon dioxide film which comprises contacting a substrate with a treating liquid comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide to deposit a silicon dioxide film on the surface of a substrate, the method being characterized in that a means for preventing an Si component from escaping from the treating liquid is provided.
A method for producing a silicon dioxide film which comprises contacting a substrate with a treating liquid comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide and depositing a silicon dioxide film on a surface of said substrate, said method including a means for preventing an Si component contained in said treating liquid from escaping therefrom.
Dependencies are inferred from the claim text.