Y10S 148/05
Etch and refill
Y10S148/05 (Etch and refill) appears on 429 US grants and 13 published applications in this corpus.
Search patents in Y10S- Granted patents
- 429
- Published applications
- 13
- Assignees
- 110
- Inventors
- 697
- Latest grant
- 22 Jan 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 5 | 0 |
| 1982 | 6 | 0 |
| 1983 | 2 | 0 |
| 1984 | 5 | 0 |
| 1985 | 14 | 0 |
| 1986 | 21 | 0 |
| 1987 | 19 | 0 |
| 1988 | 8 | 0 |
| 1989 | 12 | 0 |
| 1990 | 11 | 0 |
| 1991 | 12 | 0 |
| 1992 | 16 | 0 |
| 1993 | 32 | 0 |
| 1994 | 34 | 0 |
| 1995 | 33 | 0 |
| 1996 | 17 | 0 |
| 1997 | 26 | 0 |
| 1998 | 37 | 0 |
| 1999 | 44 | 0 |
| 2000 | 32 | 0 |
| 2001 | 12 | 3 |
| 2002 | 4 | 4 |
| 2003 | 1 | 1 |
| 2004 | 2 | 0 |
| 2005 | 1 | 2 |
| 2006 | 0 | 1 |
| 2007 | 1 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Batch-processing method for super-high aspect ratio diffractive optics22 Jan 2019US 10,183,375 B2Alcorix Co.
- Method of fabricating semiconductor device25 Oct 2011US 8,043,932 B2Dongbu HiTek Co., Ltd.
- Shallow trench isolation using low dielectric constant insulator13 Feb 2007US 7,176,549 B2Micron Technology, Inc.
- Recessed shallow trench isolation structure nitride liner and method for making same1 Nov 2005US 6,960,818 B1Siemens Aktiengesellschaft
- Shallow trench isolation using low dielectric constant insulator14 Dec 2004US 6,831,347 B1Micron Technology, Inc.
- Batch-processing method for super-high aspect ratio diffractive optics7 Sep 2017US 2017/0256330 A1Alcorix Co.
- Method of fabricating semiconductor device6 Mar 2008US 2008/0057721 A1Dongbu HiTek Co., Ltd.
- LOCOS trench isolation structures19 Oct 2006US 2006/0231902 A1
- Shallow trench isolation using low dielectric constant insulator28 Apr 2005US 2005/0087833 A1Micron Technology, Inc.
- Locos trench isolation structure20 Jan 2005US 2005/0012158 A1Micron Technology, Inc.
Most cited
By later US patents
- Smart-cut process for the production of thin semiconductor material films583US 5,882,987 AInternational Business Machines Corporation · 1999
- Shallow trench isolation technique396US 5,719,085 AIntel Corporation · 1998
- Method for forming a film on a substrate by activating a reactive gas318US 5,156,881 AKabushiki Kaisha Toshiba · 1992
- Method for forming a film on a substrate by activating a reactive gas250US 5,385,763 AKabushiki Kaisha Toshiba · 1995
- Technique for producing small islands of silicon on insulator210US 5,691,230 AMicron Technology, Inc. · 1997