Method for forming a film on a substrate by activating a reactive gas

A thin film forming method, comprising the steps of:

• supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel;
• exciting a first reactive gas outside of the reaction vessel;
• introducing the excited first reactive gas and a second reactive gas, different from the first reactive gas, into the reaction vessel;
• reacting the excited first reactive gas and the second reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point;
• and
• forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

A thin film forming method, comprising the steps of:

• supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel;
• exciting a first reactive gas outside of the reaction vessel;
• introducing the excited first reactive gas and a second reactive gas, different than the first reactive gas, into the reaction vessel;
• supplying thermal energy from the substrate to at least one of the first and second reactive gases introduced into the reaction vessel, to form a liquefied deposit species produced by a reaction of the first and second reactive gases;
• and
• flowing the liquefied deposit species onto a surface of the substrate to form a thin film on the substrate.

A thin film forming method, comprising the steps of:

• supporting a semiconductor substrate, having a trench or an unevenness thereon, in a reaction vessel;
• introducing a first reactive gas and a second reactive gas into the reaction vessel, the first and second reactive gases each being characterized by a respective phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point;
• and
• reacting the first and second gases to form a thin film containing elements of the first and second reactive gases on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of at least one of the first and second reactive gases, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of at least one of the first and second reactive gases.

A thin film forming method, comprising the steps of:

• supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel;
• exciting a first reactive gas outside of the reaction vessel;
• introducing the excited first reactive gas and a second reactive gas, different from the first reactive gas, into the reaction vessel, the first and second reactive gases each being characterized by a respective phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point;
• and
• reacting the excited first reactive gas and the second reactive gas to form a thin film containing elements of the first and second reactive gases on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of at least one of the first and second reactive gases introduced into the reaction vessel, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of at least one of the first and second reactive gases.