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US 5,156,881 AGranted
Method for forming a film on a substrate by activating a reactive gas
AssigneeKabushiki Kaisha Toshiba
InventorsHaruo Okano, Sadahisa Noguchi, Makoto Sekine
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Abstract
A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the reaction vessel, and cooling the semiconductor substrate below the liquid faction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.
Claims51
A thin film forming method, comprising the steps of:
- supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel;
- introducing a reactive gas into the reaction vessel;
- activating the reactive gas to form a deposit species;
- exhausting the interior of the reaction vessel;
- and
- cooling the semiconductor substrate below the liquefaction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.