Shallow trench isolation using low dielectric constant insulator
AssigneeMicron Technology, Inc.
InventorsKlaus F. Schuegraf, Aftab Ahmad
Life of this patent
Estimating the term…
Abstract
A shallow trench isolation is disclosed wherein the trench depth is reduced beyond that achieved in prior art processes. The reduced trench depth helps to eliminate the formation of voids during the trench refill process and provides for greater planarity in the final isolation structure. Effective device isolation is achieved with a reduced trench depth by utilizing refilling dielectric materials having low dielectric constant.
Claims10
An isolation structure in a semiconductor substrate comprising:
- a recessed portion formed with a vertical sidewall within the semiconductor substrate;
- and
- a dielectric material comprising a halide-doped silicon oxide filling the recessed portion, said dielectric material having a dielectric constant lower than the dielectric constant of silicon dioxide.
An integrated circuit having a plurality of isolation regions within a semiconductor substrate, each isolation region defined by:
- a trench within the substrate, the trench having a characteristic profile produced by an etch process;
- and
- a halide-doped silicon oxide filling the trench to form an isolation element, an interface between the isolation element and the substrate retaining the characteristic profile of the trench.
Dependencies are inferred from the claim text.