Y10S 148/015
Capping layer
Y10S148/015 (Capping layer) appears on 61 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 61
- Published applications
- 0
- Assignees
- 34
- Inventors
- 111
- Latest grant
- 27 Nov 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 9 | 0 |
| 1991 | 4 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 9 | 0 |
| 1996 | 6 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD27 Nov 2001US 6,323,554 B1International Business Machines Corporation
- Refractory metal capped low resistivity metal conductor lines and vias14 Nov 2000US 6,147,402 AInternational Business Machines Corporation
- Refractory metal capped low resistivity metal conductor lines and vias2 Nov 1999US 5,976,975 AInternational Business Machines Corporation
- Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method13 Jul 1999US 5,923,073 AKabushiki Kaisha Toshiba
- Refractory metal capped low resistivity metal conductor lines and vias30 Mar 1999US 5,889,328 AInternational Business Machines Corporation
No published applications in this class yet.
Most cited
By later US patents
- Refractory metal capped low resistivity metal conductor lines and vias130US 5,585,673 AInternational Business Machines Corporation · 1996
- Refractory metal capped low resistivity metal conductor lines and vias124US 5,300,813 AInternational Business Machines Corporation · 1994
- Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD78US 5,403,779 AInternational Business Machines Corporation · 1995
- Methods for inhibiting outgrowth of silicide in self-aligned silicide process73US 5,196,360 AMicron Technologies, Inc. · 1993
- Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD71US 6,323,554 B1International Business Machines Corporation · 2001