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AssigneeInternational Business Machines Corporation
InventorsRajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal, Louis L. Hsu
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Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.
A method of creating a liner in high aspect ratio, submicron holes and lines comprising the step of sputtering a refractory metal or alloy through a collimator into a high aspect ratio, submicron hole or line in a dielectric at a pressure where scattering deposition dominates to create a conformal coating to a point where a liner thick enough to promote adhesion of chemical vapor deposition metal which will be subsequently deposited in said liner is produced.
A method of forming a liner in high aspect ratio, submicron holes and lines, comprising the steps of:
A method of creating metalization lines and vias on a substrate, comprising the steps of:
A method of creating metalization lines and vias on a substrate, comprising the steps of:
A method of creating metalization lines and vias on a substrate, comprising the steps of:
A method of creating metalization lines and vias on a substrate, comprising the steps of:
A method of creating metalization lines and vias on a substrate, comprising the steps of:
A method of creating metalization lines and vias on a substrate, comprising the steps of:
A method of creating metalization lines and vias on a substrate, comprising the steps of:
A method of forming metalization lines and vias on a substrate, comprising the steps of:
A method of creating a liner in high aspect ratio, submicron holes and lines comprising the step of sputtering a metal or alloy into a high aspect ratio, submicron hole or line in a dielectric at a pressure where directional deposition dominates, without collimation, to create a conformal coating to a point where a liner thick enough to promote adhesion of a chemical vapor deposition metal which will be subsequently deposited in said liner is produced.
A method of forming micron and sub-micron metalization lines and vias on a substrate, comprising the steps of:
Dependencies are inferred from the claim text.