Y10S 148/007
Autodoping
Y10S148/007 (Autodoping) appears on 26 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 26
- Published applications
- 0
- Assignees
- 16
- Inventors
- 51
- Latest grant
- 18 Nov 1997
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of fabricating a twin - well CMOS device18 Nov 1997US 5,688,710 AHoltek Microelectronics, Inc.
- Bifacial solar cell9 Sep 1997US 5,665,175 A
- Method for reducing dopant diffusion11 Jun 1996US 5,525,529 ATexas Instruments Incorporated
- Method of making diffused doped areas for semiconductor components24 Oct 1995US 5,461,002 A
- Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth10 Sep 1991US 5,047,365 ANEC Corporation
No published applications in this class yet.
Most cited
By later US patents
- Bifacial solar cell151US 5,665,175 A1997
- Method of making diffused doped areas for semiconductor components53US 5,461,002 A1995
- Accurate control during vapor phase epitaxy32US 3,930,908 ARCA Corporation · 1976
- Back sealing of silicon wafers22US 4,687,682 AAmerican Telephone and Telegraph Company, AT&T Technologies, Inc. · 1987
- Method for reducing dopant diffusion20US 5,525,529 ATexas Instruments Incorporated · 1996