Y10S 148/077
Implantation of silicon on sapphire
Y10S148/077 (Implantation of silicon on sapphire) appears on 28 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 28
- Published applications
- 1
- Assignees
- 18
- Inventors
- 42
- Latest grant
- 16 Dec 2003
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 5 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 0 |
| 2003 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Active well schemes for SOI technology16 Dec 2003US 6,664,150 B2International Business Machines Corporation
- Active well schemes for SOI technology22 Oct 2002US 6,469,350 B1International Business Machines Corporation
- Semiconductor device12 Mar 2002US 6,355,941 B1Semiconductor Energy Laboratory Co.Ltd.
- Method for producing a semiconductor device using delamination26 Sep 2000US 6,124,185 AIntel Corporation
- Semiconductor device with reduced capacitance7 Sep 1999US 5,949,108 AIntel Corporation
Most cited
By later US patents
- Process for making high performance silicon-on-insulator transistor with body node to source node connection92US 4,946,799 ATexas Instruments Incorporated · 1990
- Method of making laser recrystallized silicon-on-insulator nonvolatile memory device82US 4,619,034 ANCR Corporation · 1986
- Semiconductor device of non-single crystal structure81US 4,581,620 A1986
- Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits72US 4,659,392 AHughes Aircraft Company · 1987
- Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing69US 4,683,637 AMotorola, Inc. · 1987