Semiconductor device with reduced capacitance
AssigneeIntel Corporation
InventorBrian S. Doyle
Life of this patent
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Abstract
A process for producing a metal oxide semiconductor (MOS transistor) is provided. The process includes the following steps. At least two trenches are formed at a surface of a first substrate. Oxide is deposited onto the at least two trenches. The at least two trenches each have a surface spaced apart from the surface of the first substrate. A second substrate is placed onto the surface of the first substrate. A layer is delaminated from the first substrate. The layer includes the at least two oxide-filled trenches and a portion of the first substrate. The layer is then bonded to a second substrate. First and second active regions are then formed, in the portion of the first substrate, overlaying the surfaces of the at least two trenches.
Claims11
A Metal Oxide Semiconductor Field Effect (MOSFET) transistor produced by the process of:
- a. forming two trenches at a surface of a first substrate;
- b. forming a first dielectric layer into said two trenches;
- c. placing a second substrate onto said surface of said first substrate;
- d. delaminating a layer from said first substrate, said layer including said two trenches and a portion of said first substrate;
- e. bonding said layer to said second substrate;
- and
- f. forming, in said portion of said first substrate, first and second active regions.
Dependencies are inferred from the claim text.