Active well schemes for SOI technology
AssigneeInternational Business Machines Corporation
InventorsWilliam F. Clark, Jr., Edward J. Nowak, Jed H. Rankin, Minh H. Tong
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Abstract
A semiconductor device fabricated on a silicon-on-insulator substrate and having an active well scheme as well as methods, including a non-self-aligned and self-aligned, of fabricating such a device are disclosed herein. The semiconductor device includes field effect transistor 124 comprising at least body region 127 and diffusion regions 132; buried interconnect plane 122 optionally self-aligned to diffusion regions 132 and in contact with body region 127; isolation oxide region 118 between diffusion regions 132 and buried interconnect plane 122; and buried oxide layer 104 present beneath buried interconnect plane 122.
Claims5
A semiconductor device fabricated on a silicon-on-insulator substrate, said device comprising:
- a field effect transistor structure comprising at least a body and diffusion regions;
- a buried interconnect plane contacting the body;
- an isolation oxide region between the diffusion regions and the buried interconnect plane;
- and
- a buried oxide layer present beneath said buried interconnect plane, said buried oxide layer present atop a Si-containing substrate.
Dependencies are inferred from the claim text.