Method for producing a semiconductor device using delamination
AssigneeIntel Corporation
InventorBrian S. Doyle
Life of this patent
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Abstract
A process for producing a metal oxide semiconductor (MOS) transistor is provided. At least two trenches are formed at a surface of a first substrate. Oxide is deposited onto the at least two trenches. The at least two trenches each have a surface spaced apart from the surface of the first substrate. A second substrate is placed onto the surface of the first substrate. A layer is delaminated from the first substrate. The layer includes the at least two oxide-filled trenches and a portion of the first substrate. The layer is then bonded to a second substrate. First and second active regions are then formed, in the portion of the first substrate, overlaying the surfaces of the at least two trenches.
Claims19
A method for producing a MOS transistor, the method comprising:
- a. forming two trenches at a surface of a first substrate;
- b. forming a first dielectric layer into said two trenches;
- c. placing a second substrate onto said surface of said first substrate;
- d. delaminating a layer from said first substrate, said layer including said two trenches and a portion of said first substrate;
- e. bonding said layer to said second substrate;
- and
- f. forming, in said portion of said first substrate, first and second active regions.
A method for producing a transistor, the method comprising
- a. forming a trench at a surface of a first substrate as viewed from a top side, said trench having a surface spaced apart from said surface of said first substrate;
- b. depositing oxide onto said trench;
- c. placing a second substrate to down onto said surface of said first substrate;
- d. delaminating a layer from said first substrate, said layer including said trench and a portion of said first substrate;
- e. bonding said layer to said second substrate forming a composite structure;
- and
- f. forming, as viewed from the flipped side of the composite structure wherein the said layer is on top in said portion of said first substrate, an active region overlaying said surface of said oxide-filled trench.
A method of forming a transistor, the method comprising
- a. forming a first trench in a semiconductor substrate;
- b. filling the first trench with a dielectric material;
- c. placing a second substrate onto the semiconductor substrate;
- d. delaminating a portion of the semiconductor substrate, the portion including the first trench and adjacent semiconductor materials;
- and
- e. forming an active region in said adjacent semiconductor material.
Dependencies are inferred from the claim text.