Y10S 148/046
Electron beam treatment of devices
Y10S148/046 (Electron beam treatment of devices) appears on 37 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 37
- Published applications
- 0
- Assignees
- 22
- Inventors
- 75
- Latest grant
- 2 May 2006
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for fabricating semiconductor device2 May 2006US 7,037,371 B1Matsushita Electric Industrial Co., Ltd.
- Semiconductor IC device fabricating method17 Nov 1998US 5,837,423 AHitachi, Ltd.
- Semiconductor IC device fabricating method24 Jun 1997US 5,641,715 AHitachi, Ltd.
- Method of etching a pattern on a substrate using a scanning probe microscope8 Apr 1997US 5,618,760 AThe Board of Trustees of the Leland Stanford Jr. University
- High efficiency light emitting diodes from bipolar gallium nitride11 May 1993US 5,210,051 ACree Research, Inc.
No published applications in this class yet.
Most cited
By later US patents
- High efficiency light emitting diodes from bipolar gallium nitride558US 5,210,051 ACree Research, Inc. · 1993
- Method of manufacturing devices having superlattice structures74US 4,983,540 AHitachi, Ltd. · 1991
- Method of etching a pattern on a substrate using a scanning probe microscope52US 5,618,760 AThe Board of Trustees of the Leland Stanford Jr. University · 1997
- Carry device for fine movement43US 4,766,465 ACanon Kabushiki Kaisha · 1988
- Method of etching a semiconductor device by an ion beam42US 5,086,015 AHitachi, Ltd. · 1992