US 5,641,715 A · Semiconductor IC device fabricating method

Abstract

Either a chemical amplification positive electron beam resist film or a chemical amplification negative electron beam resist film is used selectively according to an IC fabricating process when forming a minute IC pattern by using, as a mask, a resist pattern formed by irradiating the chemical amplification electron beam resist film formed on a semiconductor wafer with an electron beam, to form the minute IC pattern quickly in a high accuracy and to carry out an electron beam direct writing at a high throughput. The chemical amplification electron beam resist film is coated with a conductive polymer film before irradiating the same with the electron beam to prevent the charging-up of the chemical amplification electron beam resist film and to stabilize the chemical amplification electron beam resist film during a electron beam writing process.

Claims22

Dependent claims

A semiconductor IC device fabricating method having a process of forming contact holes using a resist pattern, as an etching mask, formed by irradiating a chemical amplification electron beam resist film overlying a major surface of a semiconductor wafer with an electron beam, the process comprising:

(a) forming an insulating film by deposition over a major surface of the semiconductor wafer where individual devices of an IC are formed, forming a chemical amplification positive electron beam resist film by coating the chemical amplification positive electron beam resist film over the insulating film and coating a protective polymer film over the resist film;
(b) irradiating the chemical amplification positive electron beam resist film with an electron beam;
(c) removing the protective polymer film;
(d) after removing the protective polymer film, baking the chemical amplification positive electron beam resist film to promote a resist dissolving reaction using, as a catalyst, an acid produced in the chemical amplification positive electron beam resist film by irradiating the chemical amplification positive electron beam resist film with the electron beam;
(e) developing the chemical amplification positive electron beam resist film to form a resist pattern by removing irradiated portions thereof;
and
(f) etching the insulating film by using the resist pattern as a mask to form contact holes.

4 more elements

A semiconductor IC device fabricating method which forms contact holes for interconnecting wiring lines by using, as an etching mask, a resist pattern formed by irradiating a chemical amplification electron beam resist film overlying a major surface of a semiconductor wafer with an electron beam through a process comprising:

(a) depositing an insulating film over individual device portions formed in the semiconductor wafer, forming a chemical amplification positive electron beam resist film over the insulating film by coating the chemical amplification positive electron beam resist film over the insulating film, and forming a protective polymer film over the chemical amplification positive electron beam resist film;
(b) irradiating the chemical amplification positive electron beam resist film with an electron beam;
(c) removing the protective polymer film;
(d) after removing the protective polymer film, baking the chemical amplification positive electron beam resist film to promote a resist dissolving reaction using, as a catalyst, an acid produced in the chemical amplification positive electron beam resist film by irradiating the chemical amplification positive electron beam resist film with the electron beam;
(e) forming a resist pattern by developing the chemical amplification positive electron beam resist film to remove portions of the chemical amplification positive electron beam resist film irradiated with the electron beam;
and
(f) forming contact holes for interconnecting wiring lines by etching the insulating film using the resist pattern as a mask.

4 more elements

A semiconductor IC device fabricating method capable of irradiating a semiconductor wafer in a shaped electron beam projection mode where an electron beam travels through an electron beam mask provided with at least one aperture having a shape corresponding to a pattern to be formed over at least a part of the semiconductor wafer or a shape corresponding to the reversal pattern of the pattern to be formed over at least a part of the semiconductor wafer, said method comprising:

(a) forming a chemical amplification positive electron beam resist film over a first thin film overlying a first major surface of the semiconductor wafer and mounting the semiconductor wafer on a writing stage of an electron beam exposure apparatus;
(b) irradiating the chemical amplification positive electron beam resist film with an electron beam traveled through a first electron beam mask provided with an aperture;
(c) etching the first thin film by using, as a mask, a resist pattern formed by developing the chemical amplification positive electron beam resist film;
(d) removing the chemical amplification positive electron beam resist film;
(e) forming a chemical amplification negative electron beam resist film over a second thin film overlying the first major surface of the semiconductor wafer and mounting the semiconductor wafer on a writing stage of the electron beam exposure apparatus or another electron beam exposure apparatus;
(f) irradiating the chemical amplification negative electron beam resist film with an electron beam traveled through a second electron beam mask provided with an aperture;
(g) etching the second thin film by using, as a mask, a resist pattern formed by developing the chemical amplification negative electron beam resist film;
and
(h) removing the chemical amplification negative electron beam resist film.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor IC device fabricating method

Life of this patent

Semiconductor IC device fabricating method

Life of this patent

Abstract

Claims22