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US 5,837,423 AGranted
Semiconductor IC device fabricating method
AssigneeHitachi, Ltd.
InventorYoshihiko Okamoto
Life of this patent
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AssigneeHitachi, Ltd.
InventorYoshihiko Okamoto
Estimating the term…
Either a chemical amplification positive electron beam resist film or a chemical amplification negative electron beam resist film is used selectively according to an IC fabricating process when forming a minute IC pattern by using, as a mask, a resist pattern formed by irradiating the chemical amplification electron beam resist film formed on a semiconductor wafer with an electron beam, to form the minute IC pattern quickly in a high accuracy and to carry out an electron beam direct writing at a high throughput. The chemical amplification electron beam resist film is coated with a conductive polymer film before irradiating the same with the electron beam to prevent the charging-up of the chemical amplification electron beam resist film and to stabilize the chemical amplification electron beam resist film during a electron beam writing process.
A process of forming patterns overlying a major surface of a plate member using a resist pattern as an etching mask, the resist pattern being formed by irradiating a chemical amplification electron beam resist film, overlying the major surface of the plate member, with at least one electron beam, comprising:
A process of forming patterns overlying a major surface of a plate member using a resist pattern as an etching mask, the resist pattern being formed by irradiating a chemical amplification electron beam resist film, overlying the major surface of the plate member, with at least one electron beam, comprising:
A process of forming patterns overlying a major surface of a plate member using a resist pattern as an etching mask, the resist pattern being formed by irradiating a chemical amplification electron beam resist film, overlying the major surface of the plate member, with at least one electron beam, comprising:
A process of forming patterns overlying a major surface of a plate member using a resist pattern as an etching mask, the resist pattern being formed by irradiating a chemical amplification electron beam resist film, overlying the major surface of the plate member, with at least one electron beam, comprising:
Dependencies are inferred from the claim text.